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Si4914DY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless noted
40
0.10
0.08
10
T J = 150 °C
0.06
0.04
I D = 7.4 A
1
T J = 25 °C
0.02
0.00
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
100
10
1
0.1
0.01
0.001
V SD – Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
200
160
120
80
40
0
V GS – Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0
25
50
75
100
125
150
0.001
0.01
0.1
1
10
T J – Temperature (°C)
Reverse Current vs. Junction Temperature
100
r DS(on) Limited
Time (sec)
Single Pulse Power, Junction-to-Ambient
I DM Limited
10
1 ms
1
I D(on)
10 ms
Limited
100 ms
0.1
T C = 25 °C
Single Pulse
1s
10 s
dc
BV DSS Limited
0.01
0.1
1
10
100
V DS – Drain-to-Source Voltage (V)
Safe Operating Area
Document Number: 72938
S-61959-Rev. C, 09-Oct-06
www.vishay.com
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